• Accurately measures film thickness as a function of time during photoresist develop.

• Simultaneously measures up to ten wafer exposure pads, with pad dimension ranging from 1.5 mm to 5 mm.

• Generates time/dose/ thickness matrix file for each develop experiment.

• Spectral reflectance provides independent thickness measurement for each acquired data sample, at a rate of up to 1000 measurements/ second.

• Measures up to 8000 thickness points per exposure pad per develop run. Accepts silicon, metallized, thin film coated, and AR coated substrates of up to 12” diameter.

• Measurement accuracy of ± 20 Å for undeveloped samples, ± 100 Å during resist develop.

HSDRM Brochure
85kb Acrobat file

Measurement

Measurement technique: spectral reflectance

Measurement pad size: 1.5mm x 1.5 mm up to 5mm x 5mm.

Up to 10 pads on the wafer

Integrated wafer alignment and developer dispense hardware

Measurement rate: 1kHz, 0.5 kHz – 0.03 kHz

Data buffer size: 1 – 8190 thickness points / pad

Photoresist thickness: <10 µm

Accuracy: +/-20 Å for undeveloped samples, +/-100 Å during resist develop

Materials: any optically transparent, with known index of refraction

Software

DOS compatible software interface for data acquisition and data storage.

Windows 95/98 software interface for data analysis.

Spectral reflectance analysis monitors thickness from the very start of the developer dispense for the paddle develop process.

Multi-layer algorithm provides thickness for the photoresist film applied directly to the substrate or on top of an AR coating.

General

Head Dimensions: 7.5"x10"x20"

Mount Height: 33”

Table Dimension: 18"x18"

Supply Voltage: 110 V